本文關(guān)鍵詞： 環(huán)形振蕩器 電流控制 低溫漂 DC-DC轉(zhuǎn)換器　出處：《南京郵電大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：作為眾多電子裝置的關(guān)鍵部件,振蕩器的應(yīng)用范圍從微處理芯片中的時(shí)鐘生成到蜂窩電話中的載波合成,對(duì)結(jié)構(gòu)和性能參數(shù)提出了差別特別大的需求。隨著CMOS工藝技術(shù)的發(fā)展,振蕩器的結(jié)構(gòu)不斷變化,這不僅滿足了電路設(shè)計(jì)者的選擇需求,而且也滿足了振蕩器在不同場(chǎng)合下的應(yīng)用。環(huán)形振蕩器所具有的特殊屬性使其更加有利于設(shè)計(jì)頻率高、調(diào)節(jié)范圍寬、線性度高的振蕩器。然而溫度對(duì)振蕩器的頻率穩(wěn)定性具有較大影響,因此有必要對(duì)環(huán)形振蕩器的溫度進(jìn)行補(bǔ)償。本文針對(duì)低溫漂的環(huán)形振蕩器進(jìn)行了研究設(shè)計(jì),提出了電流控制的結(jié)構(gòu),首先介紹了振蕩器的研究背景及研究現(xiàn)狀;而后介紹了振蕩器的工作原理及環(huán)形振蕩器的基本結(jié)構(gòu);接下來(lái)根據(jù)設(shè)計(jì)方案對(duì)模塊電路及整體電路進(jìn)行了設(shè)計(jì)并且使用仿真軟件進(jìn)行了仿真驗(yàn)證;最后對(duì)版圖部分進(jìn)行了設(shè)計(jì)。本文使用標(biāo)準(zhǔn)的CSMC 0.5um CMOS工藝庫(kù)進(jìn)行了電路的設(shè)計(jì)仿真,通過模擬仿真實(shí)現(xiàn)了低溫漂的環(huán)形振蕩器的設(shè)計(jì)。仿真結(jié)果顯示輸出頻率大約在1.2MHz左右,當(dāng)溫度從0℃-100℃變化時(shí),頻率變化率(△f/f)大約為7.4‰。本文設(shè)計(jì)的環(huán)形振蕩器特別適合應(yīng)用于DC-DC轉(zhuǎn)換器中。
[Abstract]:As a key part of many electronic devices, oscillator applications range from the micro processing chip in the clock generation to carrier synthesis in a cellular phone, the difference is particularly large demand on the structure and performance parameters. With the development of CMOS technology, changing oscillator structure, which not only meets the demand to choose the circuit designers. But also to meet the application of oscillator in different occasions. The special properties of the ring oscillator is more conducive to the design of high frequency, wide adjustment range, high linearity of the oscillator. However, temperature on the vibration frequency stability device has a great influence, so it is necessary to compensate the temperature. This paper studies the ring oscillator for the design of low temperature drift of ring oscillator, puts forward the structure of current control, first introduced the research background and research situation of the oscillator and the dielectric; Introduces the basic structure and working principle of the ring oscillator oscillator; next according to the design of circuit and the whole circuit and the use of simulation software for the simulation of the layout; finally the part of the design. This paper use the standard CSMC 0.5um CMOS technology base for the simulation, through the simulation to achieve the design of low temperature drift of ring oscillator. The simulation results show that the output frequency is about 1.2MHz, when the temperature from 0 DEG -100 DEG change, frequency change rate (f/f) is about 7.4 per thousand. The design of the ring oscillator is especially suitable for application in DC-DC converter.

【學(xué)位授予單位】：南京郵電大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN752

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本文編號(hào)：1483515