上海技物所納米線紅外探測(cè)器研究取得進(jìn)展
發(fā)布時(shí)間:2018-01-22 01:29
本文關(guān)鍵詞: 紅外探測(cè)器 光電探測(cè)器 技術(shù)物理研究所 禁帶 光電響應(yīng) 紅外物理 國(guó)家重點(diǎn)實(shí)驗(yàn)室 陳效 光誘導(dǎo) 光電增益 出處:《紅外》2016年11期 論文類(lèi)型:期刊論文
【摘要】:正據(jù)上海技術(shù)物理研究所網(wǎng)站報(bào)道,最近,中國(guó)科學(xué)院上海技術(shù)物理研究所紅外物理國(guó)家重點(diǎn)實(shí)驗(yàn)室胡偉達(dá)研究員、陳效雙研究員、陸衛(wèi)研究員課題組在新型納米線紅外光電探測(cè)器研究中取得進(jìn)展。該實(shí)驗(yàn)室相關(guān)研究人員在已有的窄禁帶InAs納米線反常光電響應(yīng)研究的基礎(chǔ)上,進(jìn)一步利用該反常效應(yīng)提出了基于可見(jiàn)光誘導(dǎo)Photogating輔助的單根納
[Abstract]:According to a report on the website of the Shanghai Institute of Technology Physics, recently, Hu Weida and Chen Xiaoshuang, State key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, have studied. The research group of Lu Wei researchers has made progress in the research of novel nanowire infrared photodetectors. Related researchers in this laboratory have based on the existing narrow gap band InAs nanowires anomalous photoelectric response research. Furthermore, using the anomalous effect, a new method based on visible light-induced Photogating assisted single-root admission is proposed.
【分類(lèi)號(hào)】:TN215
【正文快照】: 據(jù)上海技術(shù)物理研究所網(wǎng)站報(bào)道,]探,
本文編號(hào):1453194
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