本文關鍵詞： 氮化鎵 金屬有機氣相沉積法 位錯 陰極射線發(fā)光 光致發(fā)光　出處：《吉林大學》2015年碩士論文　論文類型：學位論文

【摘要】：半導體材料已經廣泛應用于我們的生產生活中，發(fā)揮了重要的作用。這是一種導電性能介于導體與絕緣體的材料。在電視機，，收音機以及很多測溫裝置中都能找到半導體材料的身影。由于他導電性可受控制，從科技和經濟發(fā)展的角度上看，半導體材料具有非常巨大的重要性，如今在21世紀，我們身邊的半導體材料已經所處可見，例如計算機，手機等電子設備，汽車防撞雷達等汽車光電子市場領域，光電通信領域，軍工領域，LED半導體照明領域等等。常見的半導體材料有硅、鍺、砷化鎵等。 第三主族的元素作為一種非常有前景的光學材料被廣泛的應用于光電設備的研發(fā)當中。目前已經制造出從紫外到紅外波段工作的多種光電二極管、激光二極管、全色光電二極管顯示器等等。而其中氮化鎵作為其中一種具有較大禁帶寬度的半導體，引起了人們的注意并著重于對其研究，目前氮化鎵作為一種優(yōu)良的光學材料成為具有重要應用價值的半導體。 我們的研究材料為生長c面藍寶石襯底的不同位錯密度的氮化鎵薄膜,主要是改變位錯密度，研究位錯密度對于材料發(fā)光的影響。本文主要針對氮化鎵外延層采用光致發(fā)光和陰極射線發(fā)光兩種研究方法，研究位錯密度對氮化鎵層激子強度的影響。氮化鎵層通過金屬有機氣相沉積生長在c面的藍寶石襯底上。我們的研究是通過脈沖發(fā)光光譜來說明的。 預期結論:位錯密度會對材料的發(fā)光強度產生影響。我們根據實驗結果分析，改變位錯密度能使材料能夠具有更大的發(fā)光效率，并得出能夠更好的對氮化鎵外延層位錯進行控制的經濟快速的方法，以便于我們更好的制作出優(yōu)良的半導體器件以及光電子設備。
[Abstract]:Semiconductor materials have been widely used in our production and life, playing an important role. This is a kind of conductive materials between conductors and insulators. Semiconductor materials can be found on radios and many thermometers. Because their conductivity is controlled, semiconductor materials are of great importance in terms of technology and economic development. Now in 21th century, the semiconductor materials around us are already visible, such as computers, mobile phones and other electronic devices, automotive photoelectron market area such as automotive anti-collision radar, optoelectronic communication field, military field. LED semiconductor lighting field and so on. Common semiconductor materials are silicon, germanium, gallium arsenide and so on. As a promising optical material, the elements of the third host group have been widely used in the research and development of optoelectronic devices. At present, many photodiodes have been fabricated which work from ultraviolet to infrared bands. Laser diodes, panchromatic photodiode displays and so on. Among them, gallium nitride, as one of the semiconductor with large bandgap, has attracted people's attention and focused on its research. At present, gallium nitride as an excellent optical material has become a semiconductor with important application value. Gallium nitride films with different dislocation densities are grown on c-plane sapphire substrates. The main material is to change the dislocation density. The influence of dislocation density on the luminescence of materials was studied. In this paper, two methods of photoluminescence and cathodoluminescence were used to study the epitaxial layer of gallium nitride. The effect of dislocation density on exciton intensity of gallium nitride layer is studied. Ga _ 3N layer is grown on c-plane sapphire substrate by metal-organic vapor deposition. Our study is explained by pulse luminescence spectroscopy. Expected conclusion: dislocation density will have an impact on the luminescence intensity of the material. According to the experimental results, we found that changing dislocation density can make the material have greater luminescence efficiency. The economical and fast method of controlling the dislocation of epitaxial layer of gallium nitride is obtained, so that we can make better semiconductor devices and optoelectronic devices.
【學位授予單位】：吉林大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN304

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相關期刊論文 前1條

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