本文關(guān)鍵詞： 納米摩擦學(xué) 單晶硅 氫鈍化 摩擦 黏著　出處：《西南交通大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：單晶硅作為典型的半導(dǎo)體材料,目前已被廣泛應(yīng)用于微機(jī)電系統(tǒng)以及微納加工領(lǐng)域。然而,伴隨著器械尺度的不斷微型化,由表面力引起的黏著及摩擦問(wèn)題,不僅成為制約微機(jī)電系統(tǒng)可靠服役的關(guān)鍵因素,而且對(duì)微納器件的加工質(zhì)量產(chǎn)生嚴(yán)重的影響。因此,如何實(shí)現(xiàn)單晶硅表面的抗黏減摩設(shè)計(jì)受到越來(lái)越多的關(guān)注。表面氫鈍化作為單晶硅表面化學(xué)改性的一種常見(jiàn)方法,因其操作簡(jiǎn)單,適應(yīng)性強(qiáng),目前己廣泛應(yīng)用于集成電路清洗、硅基太陽(yáng)能電池制造等領(lǐng)域。然而,由于氧化作用等的影響,單晶硅氫鈍化表面的斥水性能會(huì)逐漸退化,因此有必要系統(tǒng)研究表面氧化對(duì)單晶硅氫鈍化時(shí)效性的影響機(jī)制。據(jù)此,本文首先通過(guò)研究單晶硅氫鈍化表面的水接觸角及化學(xué)成分隨放置時(shí)間的變化規(guī)律,揭示了不同放置環(huán)境對(duì)氫鈍化表面時(shí)效性的影響機(jī)制。在此基礎(chǔ)上,進(jìn)一步研究了氫鈍化時(shí)效性對(duì)單晶硅表面黏著及摩擦的影響規(guī)律。最后,基于單晶硅表面的自然氧化層,提出了一種單晶硅表面小線寬結(jié)構(gòu)的納米加工方法。本論文的主要研究結(jié)果及創(chuàng)新點(diǎn)如下：1.揭示了放置環(huán)境對(duì)單晶硅表面氫鈍化時(shí)效性的影響機(jī)制。單晶硅氫鈍化表面的水接觸角在大氣、純水和酒精環(huán)境下隨放置時(shí)間的增加均逐漸降低,其中水環(huán)境下的變化程度尤為劇烈,大氣環(huán)境次之,酒精溶液中變化最小。表面化學(xué)成分檢測(cè)結(jié)果顯示,單晶硅表面氧含量隨著放置時(shí)間的增加而不斷升高,其中水環(huán)境下氧含量上升最為明顯,酒精溶液氧含量變化微弱。因此,酒精溶液能在一定程度上抑制單晶硅表面的氧化反應(yīng),從而延長(zhǎng)單晶硅氫鈍化表面的時(shí)效性。2.探明了不同放置環(huán)境下氫鈍化時(shí)效性對(duì)單晶硅表面黏著和摩擦的影響規(guī)律。隨著放置時(shí)間的增加,三種環(huán)境下氫鈍化表面的黏著力和摩擦力均呈現(xiàn)上升趨勢(shì)。但由于受到表面氧化程度和表面斥水性不同的影響,酒精溶液環(huán)境下黏著力和摩擦力隨放置時(shí)間的增加變化較小；大氣和水環(huán)境下變化較為劇烈,且相比之下水環(huán)境下對(duì)黏著和摩擦的影響更為顯著。因此,單晶硅存放在酒精溶液中有利于降低其表面的黏著和摩擦。3.提出一種單晶硅表面小線寬納米結(jié)構(gòu)的加工方法�；谛∏拾霃降杼结槍�(duì)單晶硅表面(含自然氧化層)的刻劃結(jié)合后續(xù)選擇性刻蝕,可以實(shí)現(xiàn)單晶硅表面的小線寬納米結(jié)構(gòu)加工。研究表明,摩擦化學(xué)作用下氮化硅探針刻劃導(dǎo)致表面氧化層去除后暴露出硅基體,而KOH溶液選擇性刻蝕硅基體導(dǎo)致溝槽深度進(jìn)一步加深。因此,前期的探針刻劃載荷和循環(huán)刻劃次數(shù)以及刻蝕時(shí)間均會(huì)對(duì)納米溝槽的線寬及深度產(chǎn)生一定的影響。為了保證單晶硅表面的加工質(zhì)量,最佳刻蝕時(shí)間大約為7 min。
[Abstract]:Monocrystalline silicon, as a typical semiconductor material, has been widely used in the field of MEMS and micro-nano machining. However, with the continuous miniaturization of the device scale, the adhesion and friction caused by surface force is a problem. It is not only a key factor that restricts the reliable service of MEMS, but also has a serious impact on the machining quality of micro / nano devices. More and more attention has been paid to the design of anti-viscosity and anti-friction of monocrystalline silicon surface. As a common method of chemical modification of monocrystalline silicon surface hydrogen passivation is a common method because of its simple operation and strong adaptability. At present, it has been widely used in the fields of integrated circuit cleaning, silicon based solar cell manufacturing and so on. However, due to the effect of oxidation, the water repellent performance of single crystal silicon hydrogen passivation surface will be degraded gradually. Therefore, it is necessary to systematically study the mechanism of surface oxidation on the aging of single crystal hydrogen passivation. Firstly, the water contact angle and chemical composition of single crystal hydrogen passivated surface with storage time are studied in this paper. On the basis of this, the influence of hydrogen passivation time effect on the adhesion and friction of monocrystalline silicon surface is further studied. Finally, the influence of hydrogen passivation time on the surface adhesion and friction of monocrystalline silicon is studied. Natural oxide layer based on monocrystalline silicon surface. A method of nanocrystalline fabrication with small linewidth structure on the surface of monocrystalline silicon is proposed. The main results and innovations of this thesis are as follows:. 1. The mechanism of the influence of placing environment on the hydrogen passivation time of monocrystalline silicon surface is revealed. The water contact angle of the single crystal silicon hydrogen passivated surface is in the atmosphere. In pure water and alcohol environment, with the increase of storage time, the degree of change is especially sharp, the atmospheric environment is the second, and the change in alcohol solution is the least. The results of surface chemical composition detection show that. The surface oxygen content of monocrystalline silicon increases with the increase of storage time. The oxygen content in water environment is the most obvious, and the oxygen content in alcohol solution is weak. Alcohol solution can inhibit the oxidation of monocrystalline silicon to some extent. The effect of hydrogen passivation time on the adhesion and friction of monocrystalline silicon surface was investigated under different conditions. With the increase of placing time, the effect of hydrogen passivation time on the surface adhesion and friction of monocrystalline silicon was investigated. The adhesion and friction of hydrogen passivated surface increased in three environments, but were influenced by the degree of surface oxidation and the surface water repellency. The viscosity and friction of alcohol solution changed little with the increase of storage time. The changes in the atmosphere and water environment are more severe, and the effects on adhesion and friction are more significant in the water environment than in the water environment. The storage of monocrystalline silicon in alcohol solution can reduce the adhesion and friction on the surface of monocrystalline silicon. A fabrication method of small linewidth nanostructure on the surface of monocrystalline silicon is proposed. Based on the small radius of curvature silicon nitride probe on the surface of monocrystalline silicon (. Characterization and subsequent selective etching. The study shows that the silicon nitride probe scratching results in the removal of the oxide layer on the surface and exposes the silicon substrate under the tribological chemical action of the small linewidth nanocrystalline structure of the monocrystalline silicon surface. The selective etching of silicon substrate by KOH solution leads to deeper groove depth. In order to ensure the machining quality of monocrystalline silicon surface, the probe scratching load, the number of cycles and the etching time will have a certain effect on the linewidth and depth of the nanocrystalline grooves. The optimum etching time is about 7 mins.
【學(xué)位授予單位】：西南交通大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304.12

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本文編號(hào)：1445490