本文關(guān)鍵詞：原子層沉積技術(shù)制備氧化鋅薄膜及其性能的研究　出處：《北京交通大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 原子層沉積 可變電場(chǎng)調(diào)制的原子層沉積 ZnO薄膜 前驅(qū)體源 生長(zhǎng)周期

【摘要】：氧化鋅(ZnO)作為第三代半導(dǎo)體材料,由于其禁帶寬度大,可以廣泛的應(yīng)用于制造藍(lán)綠光和紫外光的光電器件,同時(shí)還具有電子漂移飽和速度高、介電常數(shù)小等特點(diǎn),因此,成為當(dāng)下半導(dǎo)體材料的研究熱點(diǎn)。而原子層沉積技術(shù)(ALD)是近些年發(fā)展起來(lái)的薄膜制備技術(shù),由于該技術(shù)制備的薄膜性能優(yōu)異、厚度可控且保型性好,也越來(lái)越受到人們的關(guān)注。本文利用自主研制原子層沉積設(shè)備在藍(lán)寶石襯底上沉積新型半導(dǎo)體材料ZnO薄膜,并通過(guò)對(duì)薄膜晶型與形貌的測(cè)試,完成對(duì)ALD技術(shù)所制備ZnO薄膜性能的分析。 1、采用熱型ALD技術(shù)制備ZnO薄膜時(shí),首先研究了鋅源脈沖時(shí)間對(duì)ZnO薄膜性能的影響,實(shí)驗(yàn)中均得到了單一(002)晶向的薄膜。實(shí)驗(yàn)中還發(fā)現(xiàn)薄膜的厚度以及生長(zhǎng)速率與鋅源脈沖時(shí)間并無(wú)直接的聯(lián)系,但是隨著鋅源脈沖時(shí)間的增加,薄膜結(jié)晶性能得到改善,粗糙度有所降低,載流子濃度從5.5×1019/cm3增加到7.6×1019/cm3,導(dǎo)電性得到增強(qiáng)。 2、采用熱型ALD技術(shù)制備ZnO薄膜時(shí),其次我們研究了生長(zhǎng)的循環(huán)周期數(shù)對(duì)ZnO薄膜性能的影響。實(shí)驗(yàn)中發(fā)現(xiàn),通過(guò)增加生長(zhǎng)的循環(huán)周期數(shù),可以使薄膜晶粒尺寸明顯增大,結(jié)晶性得到了很大的改善。當(dāng)循環(huán)周期數(shù)為1000時(shí),晶粒尺寸可達(dá)到50納米,約是200循環(huán)的2.5倍,因此可以通過(guò)控制生長(zhǎng)的循環(huán)周期數(shù)來(lái)調(diào)節(jié)ZnO薄膜的晶粒尺寸。 3、針對(duì)常規(guī)ALD的技術(shù)難點(diǎn)和問(wèn)題,首次提出可變電場(chǎng)調(diào)制的原子層沉積技術(shù)(E-PEALD)的概念,并從理論上分析E-PEALD技術(shù)對(duì)反應(yīng)物的作用模式。 4、采用E-PEALD技術(shù)制備ZnO薄膜時(shí),我們研究了所施加的電場(chǎng)方向?qū)nO薄膜性能的影響,實(shí)驗(yàn)中發(fā)現(xiàn),可通過(guò)控制所施加電場(chǎng)的方向來(lái)調(diào)節(jié)ZnO薄膜的晶向。同時(shí)還研究了所施加電場(chǎng)的強(qiáng)度對(duì)ZnO薄膜性能的影響,在電場(chǎng)方向?yàn)?Zn-/O+)時(shí),可通過(guò)增大電場(chǎng)強(qiáng)度來(lái)提高薄膜在(002)晶向的單晶性。
[Abstract]:Zinc oxide (ZnO) as the third generation semiconductor material, because of its wide band gap, it can be widely used in the manufacture of blue-green light and ultraviolet light optoelectronic devices, but also has high electron drift saturation speed. Because of its small dielectric constant, ALD has become a hot research topic in semiconductor materials, and ALD (Atomic layer deposition) is a new thin film preparation technology developed in recent years. The film prepared by this technology has excellent properties, controllable thickness and good shape preservation. In this paper, ZnO thin films are deposited on sapphire substrates with atomic layer deposition equipment, and the crystal shape and morphology of the films are tested. The properties of ZnO films prepared by ALD were analyzed. 1. The effect of pulse time of zinc source on the properties of ZnO thin films was studied by thermal ALD technique. The thickness and growth rate of the films are not directly related to the pulse time of zinc source, but with the increase of the pulse time of zinc source. The crystalline properties of the films were improved, the roughness was decreased, the carrier concentration was increased from 5.5 脳 10 19 / cm 3 to 7.6 脳 10 19% cm 3, and the conductivity was enhanced. 2. When ZnO thin films were prepared by thermal ALD, the effect of cycle number on the properties of ZnO thin films was studied. When the cycle number is 1000, the grain size can reach 50 nm, which is about 2.5 times that of 200 cycles. Therefore, the grain size of ZnO films can be adjusted by controlling the cycle number of growth. 3. Aiming at the technical difficulties and problems of conventional ALD, the concept of E-PEALDD, which is a variable electric field modulated atomic layer deposition technique, is proposed for the first time. The action mode of E-PEALD on reactants is analyzed theoretically. 4. When ZnO thin films were prepared by E-PEALD, we studied the effect of the applied electric field direction on the properties of ZnO thin films. The crystal direction of ZnO thin films can be adjusted by controlling the direction of applied electric field, and the influence of the applied electric field intensity on the properties of ZnO thin films is also studied, when the electric field direction is Zn-r / O). By increasing the electric field intensity, the single crystal properties of the thin films in the crystal direction of (002) can be improved.
【學(xué)位授予單位】：北京交通大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304

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