本文關(guān)鍵詞：GaSb襯底上分子束外延生長(zhǎng)的低溫GaSb薄膜的低缺陷表面（英文）　出處：《紅外與毫米波學(xué)報(bào)》2017年02期 　論文類(lèi)型：期刊論文

  更多相關(guān)文章： 低缺陷 銻化鎵 原子力顯微鏡 V/III比

【摘要】：系統(tǒng)地研究了隨著GaSb薄膜生長(zhǎng)溫度的降低,Sb/Ga(V/III)比的變化對(duì)薄膜低缺陷表面質(zhì)量的影響.為了獲得良好表面形貌的GaSb外延層,生長(zhǎng)溫度與V/III比均需要同時(shí)降低.當(dāng)Sb源裂解溫度為900℃時(shí),生長(zhǎng)得到低缺陷表面的低溫GaS b薄膜的最佳生長(zhǎng)條件是生長(zhǎng)溫度為在再構(gòu)溫度的基礎(chǔ)上加60℃且V/III比為7.1.
[Abstract]:The effect of the change of Sb / Ga ( V / III ) ratio on the surface quality of thin films was systematically studied with the decrease of the growth temperature of GaSb films . In order to obtain GaSb epitaxial layer with good surface morphology , the growth temperature and V / III ratio need to be reduced simultaneously . When the cleavage temperature of Sb source is 900 鈩，

本文編號(hào)：1380540