【摘要】：類金剛石薄膜(DLC)是一種以sp3雜化鍵和sp2雜化鍵的形式結(jié)合生成的亞穩(wěn)態(tài)材料,兼具了金剛石和石墨的優(yōu)良特性,具有高硬度、高彈性模量,低摩擦因數(shù)、耐磨損以及良好的真空摩擦的特性。DLC薄膜在紅外區(qū)有很高的透過率,應(yīng)用于光學(xué)透鏡的保護(hù)膜、軍用車輛和飛行器的紅外窗口保護(hù)膜。光學(xué)薄膜制造及實(shí)際應(yīng)用方面DLC薄膜突破了大面積、高均勻性、高透射比、抗激光兼容的紅外減反射膜制備等關(guān)鍵技術(shù)。但DLC薄膜激光損傷閾值(LIDT)卻非常低,該特性嚴(yán)重制約了薄膜在紅外激光系統(tǒng)中的應(yīng)用。本論文針對(duì)DLC薄膜的特性并根據(jù)傳統(tǒng)的薄膜抗激光損傷方法,提出了一種新的通過外加偏置電場(chǎng)提高DLC薄膜損傷閾值的方法。設(shè)計(jì)出抗激光損傷閾值的總體方案,搭建外加偏置電場(chǎng)的薄膜損傷測(cè)試裝置。采用1-on-1零幾率損傷法,對(duì)比無(wú)外加電場(chǎng)和有外加電場(chǎng)的薄膜損傷閾值,再對(duì)外加電場(chǎng)不斷增加薄膜損傷閾值的改變。最終對(duì)測(cè)試結(jié)果進(jìn)行總結(jié)分析。實(shí)驗(yàn)結(jié)果顯示：在相同激光能量下,DLC薄膜在加外加偏置電場(chǎng)后,損傷形貌有明顯的改善,對(duì)比無(wú)外加電壓和外加100v電壓薄膜的LIDT從0.57J/cm2提高0.64J/cm2。在電場(chǎng)不斷增加情況下薄膜的損失閾值也不斷增加,但當(dāng)增加到一定程度損傷閾值會(huì)趨于平穩(wěn)電場(chǎng)再增加損傷閾值也不會(huì)改變。外加電壓增加到700v薄膜的LIDT增加到1.33J/cm2電壓增到999v薄膜的LIDT不再發(fā)生變化。根據(jù)物理特性進(jìn)行了機(jī)理分析,在電場(chǎng)作用下激光在薄膜中產(chǎn)生的光生電子發(fā)生了快速漂移,有效的減少了激光輻照區(qū)域產(chǎn)生的熱能量,減緩了薄膜的石墨化。
[Abstract]:Diamond-like carbon (DLC) film is a kind of metastable material formed by combining sp3 hybrid bond with sp2 hybrid bond. It has excellent properties of both diamond and graphite, and has high hardness, high elastic modulus and low friction coefficient. The DLC film has high transmittance in infrared region and is used in the protective film of optical lens and the infrared window protection film of military vehicles and aircraft. The fabrication and practical application of optical thin films have broken through the key technologies such as large area, high uniformity, high transmittance and anti-laser compatible infrared antireflection films. However, the laser damage threshold (LIDT) of DLC thin film is very low, which seriously restricts the application of the thin film in infrared laser system. In this paper, according to the characteristics of DLC thin films and the traditional laser damage resistance method, a new method to increase the damage threshold of DLC thin films by applying bias electric field is proposed. The overall scheme of laser damage threshold was designed, and the thin film damage test device with bias electric field was built. The 1-on-1 zero-probability damage method is used to compare the damage threshold between the film with and without an applied electric field, and then the damage threshold of the film is increased with the increase of the applied electric field. Finally, the test results are summarized and analyzed. The experimental results show that under the same laser energy, the damage morphology of DLC thin films is obviously improved after the application of bias electric field. Compared with the LIDT without applied voltage and 100v voltage, the LIDT of DLC thin films increases by 0.64J / cm ~ 2 from 0.57J/cm2. When the electric field is increasing, the loss threshold also increases, but when the damage threshold is increased to a certain extent, the damage threshold will tend to steady electric field and then increase the damage threshold will not change. When the applied voltage is increased to 700V, the LIDT increases to the 1.33J/cm2 voltage. The LIDT of 999v thin film does not change. According to the mechanism analysis of the physical properties, the photoelectron produced by laser in the film has a fast drift under the action of electric field, which can effectively reduce the thermal energy generated in the laser irradiation region and slow down the graphitization of the film.
【學(xué)位授予單位】：西安工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.2

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本文編號(hào)：2323870