【摘要】：鐵電薄膜在壓電和熱釋電等微電子器件領(lǐng)域具有應(yīng)用潛力。為獲得出色的器件表現(xiàn),鐵電薄膜要先極化。如果制備的薄膜具有自極化,那么器件的制造成本將被顯著降低。提升鐵電薄膜自極化的穩(wěn)定性是最近幾年鐵電領(lǐng)域的研究熱點(diǎn)。傳統(tǒng)的商用鐵電測(cè)試系統(tǒng)在表征自極化鐵電薄膜方面仍顯不足。在低電壓下的測(cè)試結(jié)果并不能反映自極化薄膜的真實(shí)極化狀態(tài)。本論文針對(duì)電滯回線的定標(biāo)問(wèn)題、自極化穩(wěn)定性的評(píng)估以及提高等開(kāi)展了系統(tǒng)的研究工作。利用溶膠-凝膠法制備出了具有自極化的BiFeO3薄膜。根據(jù)電滯回線的飽和狀態(tài)提出了合理的低電壓下回線的定標(biāo)方法。研究了延遲時(shí)間對(duì)回線缺口大小的影響確定了獲得鐵電疇充分backswitching的最短延遲時(shí)間。對(duì)比研究了電壓測(cè)試順序?qū)﹄姕鼐�的影響;分析了高電壓測(cè)量后薄膜內(nèi)部缺陷對(duì)分布的變化及其對(duì)自極化穩(wěn)定性的影響。對(duì)比分析了高電壓測(cè)試后電容放置20分鐘和一天后電滯回線。研究了預(yù)極化電壓方向?qū)﹄姕鼐�的影響,根據(jù)矯頑電壓和缺口大小的變化分析了自極化穩(wěn)定性。并從缺陷化學(xué)角度解釋了自極化穩(wěn)定性與預(yù)極化電壓方向之間的關(guān)聯(lián)。基于數(shù)據(jù)分析結(jié)果,提出了合理的提升自極化薄膜穩(wěn)定性的方法。并提出了一種缺陷對(duì)梯度分布的薄膜結(jié)構(gòu),以進(jìn)一步提升自極化薄膜的壓電和熱釋電性能。本論文合理利用了電滯回線在測(cè)試過(guò)程中,高電壓對(duì)自極化薄膜初始狀態(tài)的改變,將自極化薄膜在高低電壓下的表現(xiàn)進(jìn)行對(duì)比研究,為尋找提升自極化穩(wěn)定性的方法以及研發(fā)壓電與熱釋電器件奠定了理論和實(shí)驗(yàn)基礎(chǔ)。
[Abstract]:Ferroelectric thin films have potential applications in piezoelectric and pyroelectric microelectronic devices. In order to achieve excellent device performance, ferroelectric thin films must be polarized first. If the film is self-polarized, the fabrication cost of the device will be significantly reduced. In recent years, improving the stability of self-polarization of ferroelectric thin films has been a hot topic in the field of ferroelectricity. The traditional commercial ferroelectric testing system is still insufficient in characterizing self-polarized ferroelectric thin films. The measured results at low voltage do not reflect the true polarization state of the self-polarized films. In this paper, the calibration problem of hysteresis loop, the evaluation of self-polarization stability and the improvement of self-polarization stability are studied systematically. BiFeO3 thin films with self-polarization were prepared by sol-gel method. According to the saturation state of hysteresis loop, a reasonable calibration method for low voltage loop is proposed. The effect of delay time on the gap size of loop is studied to determine the shortest delay time for obtaining full ferroelectric domain backswitching. The effect of voltage measurement sequence on hysteresis loop and the effect of internal defects on the distribution and self-polarization stability of the film after high voltage measurement were studied. The hysteresis loop of the capacitor after high voltage test for 20 minutes and one day later is compared and analyzed. The influence of the direction of prepolarization voltage on the hysteresis loop is studied. The self-polarization stability is analyzed according to the change of coercive voltage and gap size. The relationship between the self-polarization stability and the direction of prepolarization voltage is explained from the point of view of defect chemistry. Based on the results of data analysis, a reasonable method to improve the stability of self-polarized films is proposed. A defect gradient structure is proposed to further improve the piezoelectric and pyroelectric properties of self-polarized films. In this paper, the changes of the initial state of the self-polarized thin film by high voltage during the measurement of hysteretic loop are reasonably utilized, and the performance of the self-polarized film at high and low voltage is compared and studied. It lays a theoretical and experimental foundation for the research and development of piezoelectric and pyroelectric devices.
【學(xué)位授予單位】：吉林大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.2

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