【摘要】：當前Cu-Zn-Sn-硫族化物薄膜太陽能電池因其突出的優(yōu)點(直接帶隙約1.45-1.51eV、光吸收系數(shù)高約104cm-1、無毒、礦源豐富、價格便宜和環(huán)境友好),近年來成為可再生能源領域研究的熱點。本文以Cu-Zn-Sn-硫族化物為研究對象,采用磁控共濺射法制備了Cu2ZnSnS4 (CZTS)薄膜材料,并利用高溫硒化工藝制備了Cu2ZnSn(SSe)4 (CZTSSe)薄膜吸收層材料,評估了它們作為薄膜太陽電池吸收層的光電性能。首先,利用共濺射法制備Cu-Zn-Sn-S預制層,并高溫退火制備Cu2ZnSnS4 (CZTS)薄膜。研究制備工藝條件對薄膜性能的影響。結果表明,樣品光學帶隙隨退火溫度升高而減小,且隨著退火溫度升高,衍射峰強度逐漸增加,薄膜沿(112)方向擇優(yōu)生長。ZnS、SnS、Cu2S靶材濺射功率分別為60、15、20W,退火溫度為540℃,濺射時間20min,使用上述工藝可制得貧銅富鋅結構CZTS吸收層,薄膜成相較好,可見光范圍內的吸收系數(shù)大于104cm-1,顆粒均勻致密,光學帶隙為1.5eV。為進一步優(yōu)化CZTS薄膜的性能,用固體Se粉作為硒源,采用高溫硒化Cu-Zn-Sn-S預制層,制得貧銅富鋅結構的Cu2ZnSn(S, Se)4薄膜。研究了高溫硒化工藝條件對CZTSSe薄膜性能的影響。結果表明,硒化后CZTSSe薄膜的光學帶隙與CZTS薄膜相比較小,表面均勻性好且更加致密。并且隨著硒化工藝中硒粉量的增加,光學帶隙逐漸減小,當硒粉量分別為0.002、0.004、0.006和0.008g時,對應的光學帶隙分別為1.20、1.18、1.16和1.13eV。并且薄膜在紫外可見光范圍內有較好的光吸收性能,吸收系數(shù)都達到5*104cm-1以上。
[Abstract]:At present, Cu-Zn-Sn- thin film solar cells have become a hotspot in the field of renewable energy due to their outstanding advantages (direct band gap is about 1.45-1.51eV, light absorption coefficient is about 104cm-1, non-toxic, rich in mineral resources, cheap and environmentally friendly). In this paper, Cu2ZnSnS4 (CZTS) thin films were prepared by magnetron co-sputtering, and Cu2ZnSn (SSe) 4 (CZTSSe) thin film absorbers were prepared by high temperature selenization. The optical and electrical properties of Cu2ZnSn (SSe) 4 (CZTSSe) thin films were evaluated. Firstly, Cu-Zn-Sn-S prefabricated layer was prepared by co-sputtering and Cu2ZnSnS4 (CZTS) thin films were prepared by high temperature annealing. The effects of preparation conditions on the properties of the films were studied. The results show that the optical band gap decreases with the increase of annealing temperature, and the diffraction peak intensity increases with the increase of annealing temperature. The sputtering power and annealing temperature of the films are 601520W and 540 鈩，

本文編號：2258100