本文選題：磁控濺射 + 納米氧化鋅��； 參考：《吉林大學(xué)》2015年碩士論文

【摘要】：氧化鋅是一種新型的直接帶隙寬禁帶半導(dǎo)體材料，禁帶寬度是3.37eV，激子束縛能為60meV。氧化鋅一般情況下為六方纖鋅礦結(jié)構(gòu)。氧化鋅在紫外發(fā)光二極管、三極管、薄膜晶體管、紫外探測器、稀磁半導(dǎo)體、光伏器件、太陽能電池等領(lǐng)域有廣闊的應(yīng)用前景。此外制造該薄膜的原材料十分豐富，制備技術(shù)成熟，因而有效地控制了生產(chǎn)成本，價格低廉，且具有高穩(wěn)定性。染料敏化太陽能電池由于制備工藝簡單、可制作在柔性電極上，因此受到了廣泛關(guān)注。氧化鋅是最早應(yīng)用于染料敏化太陽能電池的金屬氧化物之一。 本文首先采用反應(yīng)射頻磁控濺射方法，，通過濺射氧化鋅靶制備氧化鋅薄膜，工藝參數(shù)包括溫度、氣體流量比和樣品襯底。通過對各工藝參數(shù)的系統(tǒng)研究，得到了氧化鋅薄膜的合成規(guī)律，分析了本工作所合成氧化鋅薄膜的性質(zhì)，研究了合成工藝與薄膜性質(zhì)的對應(yīng)關(guān)系。利用X射線衍射及原子力顯微鏡對薄膜進(jìn)行了分析測試，并利用光致發(fā)光方法研究了薄膜的發(fā)光性質(zhì)。實驗表明制備的氧化鋅薄膜呈現(xiàn)出較好的c軸擇優(yōu)取向生長。磁控濺射過程中溫度對氧化鋅薄膜結(jié)晶性具有重要影響，氬氧1比1時制備的薄膜有較好的結(jié)晶性，襯底為三氧化二鋁的薄膜的結(jié)晶性能更好。 然后采用固相反應(yīng)法，實驗以反應(yīng)溫度為參數(shù)，利用光致發(fā)光方法研究了樣品的發(fā)光性質(zhì)和X射線衍射對樣品的結(jié)構(gòu)進(jìn)行了分析測試。實驗表明，隨著熱反應(yīng)溫度升高位于395nm處的紫外發(fā)射峰逐漸紅移，紅移現(xiàn)象表現(xiàn)出明顯的量子尺寸效應(yīng)，這也說明納米晶氧化鋅逐漸長大。隨著制備溫度的升高，晶態(tài)氧化鋅的衍射峰逐漸增強且越來越窄，表明樣品中納米晶氧化鋅組分增多且粒徑逐漸增大，說明非晶氧化鋅逐漸向納米晶氧化鋅轉(zhuǎn)化。 最后分別用固相反應(yīng)法200℃下合成的氧化鋅納米顆粒和商用氧化鋅粉末通過手術(shù)刀法涂在FTO導(dǎo)電玻璃上，燒結(jié)成多孔氧化鋅電極。制備了以ZnO為光陽極材料，N719為染料，I/I3-體系電解液以及Pt對電極然后封裝的染料敏化太陽能電池。固相法合成氧化鋅制備的電池效率(PCE)為1.938%；商用氧化鋅粉末制備的電池效率(PCE)為0.194%。可以得出自己固相法合成氧化鋅納米材料制備的太陽能電池的光電轉(zhuǎn)換效率是普通商用材料制備的太陽能電池的10倍。
[Abstract]:Zinc oxide is a new direct bandgap wide band gap semiconductor material with a band gap width of 3.37 EV and an exciton binding energy of 60 MEV. Zinc oxide is generally hexagonal wurtzite structure. Zinc oxide has a wide application prospect in ultraviolet light emitting diode, transistor, thin film transistor, ultraviolet detector, dilute magnetic semiconductor, photovoltaic device, solar cell and so on. In addition, the thin film is made of abundant raw materials and mature preparation technology, which effectively controls the production cost, low price and high stability. Dye-sensitized solar cells have attracted wide attention due to their simple preparation process and their ability to be fabricated on flexible electrodes. Zinc oxide is one of the first metal oxides used in dye-sensitized solar cells. In this paper, the reactive RF magnetron sputtering method is used to prepare ZnO thin films by sputtering zinc oxide target. The process parameters include temperature, gas flow ratio and sample substrates. The synthesis law of zinc oxide thin film was obtained through the systematic study of various technological parameters. The properties of zinc oxide thin film synthesized in this work were analyzed, and the corresponding relationship between the synthesis process and the properties of the film was studied. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to study the photoluminescence properties of the films. The results show that the ZnO thin films exhibit good c-axis orientation. Temperature has an important effect on the crystallinity of ZnO thin films during magnetron sputtering. The films prepared by argon and oxygen 1 have better crystallinity, and the films with Al _ 2O _ 3 substrates have better crystallization properties. Then the photoluminescence properties of the samples were studied by using the solid-state reaction method and the reaction temperature was taken as the parameter. The structure of the samples was analyzed and tested by X-ray diffraction. The experimental results show that the UV emission peak located at 395nm is redshift with the increase of the temperature of the thermal reaction, and the red-shift phenomenon shows an obvious quantum size effect, which also indicates that the nanocrystalline zinc oxide grows up gradually. With the increase of the preparation temperature, the diffraction peak of crystalline zinc oxide gradually increases and becomes narrower, indicating that the composition and particle size of nanocrystalline zinc oxide increase gradually, which indicates that amorphous zinc oxide is gradually transformed to nanocrystalline zinc oxide. Finally, ZnO nanoparticles and commercial ZnO powders synthesized at 200 鈩

本文編號：2089995