本文選題：原子沉積法 + 水浴法��； 參考：《光電子·激光》2016年02期

【摘要】：為了獲得高效的整流器件和微型短波長(zhǎng)的發(fā)光器件,采用原子層沉積(ALD)法和水浴法合成了具有ZnO-CuO的結(jié)構(gòu)器件。對(duì)制備的樣品進(jìn)行了光學(xué)和電學(xué)特性的檢測(cè),獲得了22.79的整流比和17.69的理想因子,且門限電壓和整流比等特性隨CuO厚度增加而減小。在光致發(fā)光(PL)特性上,具有顯著的由ZnO帶電激發(fā)的385nm紫外光波峰,同時(shí)伴有由深能級(jí)散射激發(fā)的572nm的可見光波峰,且隨著CuO厚度的增加紫外光波峰減小,可見光峰變大。實(shí)驗(yàn)結(jié)果表明,本文制備的器件可以應(yīng)用在納米型二極管、光電探測(cè)器以及微型光源等領(lǐng)域。
[Abstract]:In order to obtain high efficiency rectifier and miniature short wavelength luminescent devices, the structure devices with ZnO-CuO were synthesized by atomic layer deposition (ALD) method and water bath method.The optical and electrical properties of the prepared samples were tested. The rectifier ratio of 22.79 and the ideal factor of 17.69 were obtained, and the threshold voltage and rectifier ratio decreased with the increase of CuO thickness.In the photoluminescence photoluminescence (PL), there are obvious ultraviolet peaks of 385nm excited by ZnO charged, and visible peaks of 572nm excited by deep level scattering. The visible peaks increase with the increase of the thickness of CuO.The experimental results show that the devices can be used in nanodiodes, photodetectors and micro light sources.
【作者單位】： 上海理工大學(xué)教育部光學(xué)儀器與系統(tǒng)工程研究中心上海市現(xiàn)代光學(xué)系統(tǒng)重點(diǎn)實(shí)驗(yàn)室;
【基金】：國(guó)家重點(diǎn)基礎(chǔ)研究發(fā)展計(jì)劃(2015CB352001) 國(guó)家自然科學(xué)基金(61205094) 上海市重點(diǎn)學(xué)科建設(shè)(S30502) 校培育計(jì)劃(13XGM11)資助項(xiàng)目
【分類號(hào)】：TB383.1

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1 范會(huì)濤;曾毅;楊海濱;鄭學(xué)軍;劉麗;張彤;;ZnO-CuO納米復(fù)合氧化物的制備及其氣敏性能[J];物理化學(xué)學(xué)報(bào);2008年07期

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本文編號(hào)：1767976