本文選題：CIGS薄膜　切入點(diǎn)：單靶磁控濺射　出處：《大連交通大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：Cu(In,Ga)Se2(CIGS)薄膜太陽電池以其高效、低成本、抗輻射能力強(qiáng)、壽命長等優(yōu)良特性引起了人們?nèi)找鎻V泛的關(guān)注。在薄膜制備方法中,磁控濺射技術(shù)是一種被普遍采用的方法,因此,本文采用單靶直流脈沖磁控濺射技術(shù)制備CIGS薄膜,系統(tǒng)地研究沉積過程中的相關(guān)制備參數(shù)對(duì)CIGS薄膜性能的影響情況。本文在制備CIGS薄膜的過程中,主要研究電源參數(shù),如濺射功率、濺射頻率,以及基底溫度等對(duì)薄膜物相結(jié)構(gòu)、擇優(yōu)取向狀態(tài)、成份、電學(xué)性能等的影響規(guī)律與機(jī)制。關(guān)于電源參數(shù)(即濺射功率和濺射頻率)對(duì)CIGS薄膜狀態(tài)及性能影響的研究表明,沉積速率(對(duì)應(yīng)沉積電流)會(huì)嚴(yán)重影響薄膜的擇優(yōu)取向狀態(tài),當(dāng)沉積速率大于22.5 nm/min時(shí),所制備的CIGS薄膜具有(220)/(204)擇優(yōu)取向。此外,沉積速率及沉積電壓均對(duì)薄膜的成份及電學(xué)性能具有重要影響。結(jié)果表明,即使未對(duì)基底加熱,薄膜均具有單一的黃銅礦結(jié)構(gòu),所有沉積的CIGS薄膜的成份含量均偏離于靶材的成份含量;沉積速率對(duì)于Se元素和Ga的含量影響較小,但隨沉積速率增加,In元素含量明顯增加、而Cu元素含量明顯降低;當(dāng)濺射電壓降低時(shí),薄膜中Se元素和Ga元素含量明顯增加,但I(xiàn)n元素含量降低�；趩我辉貫R射產(chǎn)額的半經(jīng)驗(yàn)公式,對(duì)薄膜中各元素含量隨濺射電壓的變化進(jìn)行了模擬估算,且模擬結(jié)果基本與實(shí)驗(yàn)結(jié)果相符合。鑒于模擬結(jié)果推測,影響薄膜中各元素含量的主要因素是各組元的本征屬性,如表面束縛能(或升華能)、原子序數(shù)、原子質(zhì)量等。關(guān)于電學(xué)性能的研究表明,當(dāng)薄膜為貧Cu或接近化學(xué)計(jì)量比時(shí),薄膜的載流子濃度較低,具有較高的電阻率。在磁控濺射制備CIGS薄膜的過程中,CIGS的晶化狀態(tài)對(duì)其性能也起著至關(guān)重要的作用。本論文設(shè)計(jì)了一種新穎的基底加熱方式,進(jìn)一步研究了不同的基底溫度對(duì)CIGS薄膜性能的影響。結(jié)果表明,在基底溫度不超過400oC時(shí),樣品的物相結(jié)構(gòu)為單一的黃銅礦結(jié)構(gòu)。尤其是基底溫度為400oC時(shí),獲得了具有較大晶粒、較為致密的CIGS薄膜。當(dāng)基底溫度為450oC時(shí),薄膜形貌較為疏松。研究還表明,當(dāng)基底溫度在室溫至400oC范圍內(nèi),薄膜中的成份基本沒有變化。此外,當(dāng)未施加基底溫度時(shí),薄膜中擇優(yōu)取向?yàn)?220)/(204);當(dāng)基底溫度大于100oC時(shí),薄膜中的擇優(yōu)取向轉(zhuǎn)變?yōu)?112)。
[Abstract]:Due to its high efficiency, low cost, strong radiation resistance and long lifetime, the thin film solar cells have attracted more and more attention. Magnetron sputtering is a widely used method in the preparation of thin films. In this paper, CIGS thin films were prepared by single target DC pulse magnetron sputtering. The influence of deposition parameters on the properties of CIGS thin films was systematically studied. In the process of preparing CIGS films, the power supply parameters were studied. Such as sputtering power, sputtering frequency, substrate temperature, etc., on the phase structure, preferred orientation state, composition of the film, The effects of power supply parameters (i.e. sputtering power and sputtering frequency) on the state and properties of CIGS films are studied. It is shown that the deposition rate (corresponding to deposition current) will seriously affect the preferred orientation state of CIGS films. When the deposition rate is greater than 22.5 nm/min, the prepared CIGS thin films have a preferred orientation of 220U / L / 204.Furthermore, the deposition rate and voltage have an important effect on the composition and electrical properties of the films. The results show that the substrate is not heated even if the substrate is not heated. All the films have a single chalcopyrite structure, and the composition content of all deposited CIGS films deviates from the content of target, and the deposition rate has little effect on se and Ga content, but increases obviously with the increase of deposition rate. When the sputtering voltage decreases, the content of se and Ga increases obviously, but the content of in decreases. Based on the semi-empirical formula of sputtering yield of single element, The variation of element content with sputtering voltage is simulated and estimated, and the simulation results are in good agreement with the experimental results. According to the simulation results, the main factor affecting the content of each element in the film is the intrinsic properties of each component. For example, surface binding energy (or sublimation energy, atomic number, atomic mass, etc.). Studies on electrical properties show that when the film is Cu poor or near stoichiometric ratio, the carrier concentration of the film is lower. The crystallization state of CIGS films also plays an important role in the preparation of CIGS films by magnetron sputtering. In this paper, a novel substrate heating method is designed. The effects of different substrate temperatures on the properties of CIGS thin films were further studied. The results show that the phase structure of the samples is a single chalcopyrite structure when the substrate temperature is less than 400oC. especially when the substrate temperature is 400oC, large grains are obtained. When the substrate temperature is 450 OC, the morphology of CIGS thin film is looser. The results also show that the composition of the film is almost unchanged when the substrate temperature is from room temperature to 400oC. In addition, when the substrate temperature is not applied, The preferred orientation in the thin film is 220U / L 204N, and when the substrate temperature is higher than 100oC, the preferred orientation in the film changes to 112g.
【學(xué)位授予單位】：大連交通大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.2

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