發(fā)布時間：2018-02-04 17:25

  本文關(guān)鍵詞： 激光技術(shù) 銅鋅錫硫 二元硫化物靶 磁控濺射 退火　出處：《激光與光電子學(xué)進(jìn)展》2017年09期 　論文類型：期刊論文

【摘要】：利用ZnS、SnS、CuS三種二元硫化物靶,分步濺射制備了銅鋅錫硫(CZTS)薄膜,并在不同溫度下進(jìn)行退火。研究了退火溫度對薄膜晶體結(jié)構(gòu)、組分、表面形貌及光學(xué)特性的影響。結(jié)果表明,當(dāng)退火溫度為400℃時,CZTS薄膜中含有Cu_2S及SnS等多種二次相;隨著退火溫度的升高,二次相的種類逐漸減少,當(dāng)退火溫度為550℃時,薄膜的表面平整致密,二次相種類最少;然而,當(dāng)退火溫度為600℃時,薄膜表面變得粗糙,二次相種類增多。
[Abstract]:CZTS thin films were prepared by step sputtering with three binary sulphide targets, ZnS- Sn-SnSn-CuS, and annealed at different temperatures. The crystal structure of the films was investigated by annealing temperature. The effect of composition, surface morphology and optical properties. The results show that there are several secondary phases, such as Cu_2S and SnS, in CZTS films when annealing temperature is 400 鈩，

本文編號：1490741