本文關鍵詞： 微波 介電譜 載流子 鈣鈦礦薄膜　出處：《河北大學》2017年碩士論文　論文類型：學位論文

【摘要】：微波介電譜測量技術是一種基于微波與物質材料相互作用的測量技術。該測量技術具有非接觸測量,信號采集速度快和測量時間分辨高等優(yōu)點。因此,微波介電譜測量技術在光電功能材料載流子復合動力學診斷領域具有良好的應用前景。本文首先根據(jù)半導體光生載流子復合動力學的微波介電譜測量原理,搭建了微波介電譜測量系統(tǒng),其中包括相關微波器件的選擇和微波介電譜測量系統(tǒng)的測試兩部分。在微波器件選擇方面,微波諧振腔是微波介電譜測量系統(tǒng)中的核心部件。本文使用High Frequency Structure Simulator(HFSS)軟件對微波諧振腔中的電磁場分布進行了模擬仿真。仿真結果顯示,仿真優(yōu)化結果與理論計算值一致;在TE103諧振模式下,諧振腔內電磁場分布的仿真結果顯示,電場強度最強的位置位于諧振腔的中央位置,并以此作為諧振腔側壁開縫的依據(jù)。在納秒脈沖(脈沖寬度5-7 ns)激發(fā)條件下,微波介電譜測量系統(tǒng)的時間分辨率可以到達15 ns(高斯型儀器響應函數(shù),半高全寬),在飛秒脈沖(脈沖寬度小于100 fs)激發(fā)條件下,系統(tǒng)測量時間分辨率可以達到1-2 ns。有機金屬鹵化物鈣鈦礦(CH_3NH_3PbX_3,X-Cl、Br、I)作為一種新興的光伏材料,是目前太陽能電池領域研究的重點。對鈣鈦礦薄膜光生載流子復合動力學的研究可以為鈣鈦礦太陽能電池的設計與生產提供有力的科學依據(jù)。本文利用搭建的微波介電譜測量系統(tǒng),對有機金屬鹵化物鈣鈦礦薄膜材料的載流子復合動力學進行了研究,工作主要分為三個部分:(1)本文利用微波介電譜測量技術,從光生載流子復合動力學的角度說明了Cl元素的摻入對鈣鈦礦薄膜光物理特性的影響。實驗結果顯示,相比CH_3NH_3PbI_3鈣鈦礦薄膜,CH_3NH_3PbI_(3-x)Cl_x鈣鈦礦薄膜的自由載流子復合壽命從67 ns增加到157 ns,淺束縛能級(束縛能級深度5-30 meV)載流子復合壽命從290 ns增加到492 ns。此外,通過對比CH_3NH_3PbI_3和CH_3NH_3PbI_(3-x)Cl)x鈣鈦礦薄膜的光生載流子復合動力學還發(fā)現(xiàn),后者淺束縛能級載流子的熱活化過程對載流子復合動力學影響更為顯著。因此可以推斷,Cl元素的摻雜在薄膜中引入了更多的淺束縛態(tài),同時減少了深束縛態(tài)密度。(2)本文在共振激發(fā)模式下和非共振激發(fā)模式下對CH_3NH_3PbBr_3鈣鈦礦薄膜的光生載流子復合動力學進行了測量。實驗結果表明,光生載流子復合過程分為一個快速衰減階段和一個緩慢衰減階段。當自由載流子濃度減少到一定程度后,自由載流子與淺束縛能級(束縛能級深度5-30 meV)載流子達到熱平衡。具體而言,在共振激發(fā)模式下(558 nm),自由載流子和淺束縛能級載流子達到熱平衡所需要的時間大約是56 ns;而在非共振激發(fā)下(355 nm),自由載流子和淺束縛能級載流子達到熱平衡所需要的時間更長,大約是848 ns。(3)本文還研究了CH_3NH_3PbI_3鈣鈦礦薄膜經(jīng)過光浴-暗置處理后薄膜的光生載流子復合動力學變化。實驗結果顯示,光浴-暗置后鈣鈦礦薄膜的光生載流子產率有了明顯的增加,但隨著再次光浴處理光生載流子產率快速降低。
[Abstract]:Microwave dielectric spectrum measurement technique is a measurement of microwave interaction with materials. Based on the measurement technology with non contact measurement, signal acquisition speed and the measurement of time resolved advantages. Therefore, microwave dielectric spectrum measurement technology in photoelectric functional material carrier composite dynamic diagnosis field has a good application prospect in this paper. According to the semiconductor minority carrier recombination kinetics of microwave dielectric spectrum measurement principle, build a microwave dielectric spectrum measurement system, including two parts related to microwave devices and microwave dielectric spectrum measurement system. In the aspect of the selection of microwave devices, microwave resonant cavity microwave dielectric spectrum measurement is the core component in the system this paper uses the High Frequency Structure. Simulator (HFSS) software of electromagnetic field distribution in the microwave cavity is simulated. The simulation results show that the imitation So the optimization results are consistent with theoretical values; in TE103 resonant mode, the resonant cavity of the electromagnetic field simulation results show that the electric field intensity of the strongest position is located in the cavity of the central position, and as the cavity side wall slot basis. In nanosecond pulse (pulse width of 5-7 NS) under the excitation of dielectric, time resolution the microwave spectrum measurement system can reach 15 ns (Gauss type instrument response function, full width at half maximum), in the femtosecond pulse (pulse width less than 100 fs) under the excitation system, the measuring time resolution can reach 1-2 ns. organic metal halide perovskite (CH_3NH_3PbX_3, X-Cl, Br, I) is a kind of new photovoltaic materials. Is the focus of current research in the field of solar cells. Provide scientific basis for the design and production of Perovskite Thin Films of photogenerated carrier recombination dynamics for perovskite solar cells. In this paper, using microwave dielectric structures of the spectrum measurement system, carrier recombination kinetics of organic metal halide perovskite thin films were studied. The main work is divided into three parts: (1) using microwave dielectric spectrum measurement technology, from the minority carrier recombination dynamics point of view that the incorporation of Cl effect on the photophysical properties of Perovskite Thin Films. The experimental results show that compared with CH_3NH_3PbI_3 Perovskite Thin Films, CH_3NH_3PbI_ (3-x) Cl_x free carrier recombination lifetime of Perovskite Thin films increased from 67 ns to 157 ns, shallow levels (levels of depth 5-30 meV) the carrier lifetime increased from 290 ns to 492 ns. in addition, through the comparison of CH_3NH_3PbI_3 and CH_3NH_3PbI_ (3-x) Cl) x perovskite films photogenerated carrier recombination dynamics also found that the shallow levels of the carrier thermal activation process of the carrier recombination dynamics. Sound is more significant. So it can be inferred that Cl doping introduced shallow bound more in the film, while reducing the depth bound density. (2) the light of CH_3NH_3PbBr_3 Perovskite Thin Films in the resonant excitation mode and excitation mode of non resonance carrier recombination dynamics were measured. The experimental results show that that the minority carrier recombination process into a rapid decay phase and a slow decay stage. When reducing the free carrier concentration to a certain extent, free carrier and shallow levels (levels of depth 5-30 meV) carrier to reach thermal equilibrium. Specifically, the resonance excitation mode (558 nm), free the carrier and shallow levels of carriers to reach the thermal equilibrium time required is about 56 ns; and in the non resonant excitation (355 nm), the free carrier and shallow levels of carrier to reach thermal balance A longer period of time, is about 848 ns. (3) this paper also studied the CH_3NH_3PbI_3 Perovskite Thin Films after dark the light bath after treatment thin film composite carrier dynamics. The experimental results show that the light - Dark bath after the Perovskite Thin Films of photoexcited carriers yield has increased significantly, but again with light light bath treatment carrier yield decreased rapidly.

【學位授予單位】：河北大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TB383.2;O649.5

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