【摘要】：本文是基于聚己基噻吩(P3HT)薄膜為研究對(duì)象,通過(guò)控制薄膜制備時(shí)溶劑的揮發(fā)速度來(lái)調(diào)控其微結(jié)構(gòu)及其薄膜晶體管的性能。 第一部分我們使用不同濃度的氯仿溶液通過(guò)旋涂法制備了P3HT薄膜。一維面外掠入射X射線表征的結(jié)果說(shuō)明面外方向(100)衍射峰的強(qiáng)度會(huì)隨著所用溶液的濃度下降而增高,而比較(010)衍射峰的變化趨勢(shì),正好相反。我們進(jìn)而觀察二維掠入射X射線衍射,其結(jié)果表明這是由于低濃度溶液制備的薄膜中分子鏈從face-on取向?yàn)橹鬓D(zhuǎn)變?yōu)閑dge-on取向?yàn)橹�。通過(guò)測(cè)量薄膜晶體管器件性能,可以證明edge-on取向?qū)?yīng)著更高的載流子遷移率。這與采用高沸點(diǎn)溶劑制備的樣品得到的結(jié)果類似。 第二部分我們采用了溶劑輔助旋涂法這一新方法制備樣品,它的本質(zhì)也是通過(guò)抑制溶劑揮發(fā)來(lái)調(diào)控薄膜微結(jié)構(gòu)。我們使用氯苯溶劑制備了三組不同條件的樣品,分別是正常旋涂的、經(jīng)過(guò)120min熏蒸后處理的和采用溶劑蒸汽輔助旋涂法制備的樣品。經(jīng)過(guò)一維面外掠入射X射線表征發(fā)現(xiàn)經(jīng)過(guò)熏蒸后處理與溶劑輔助旋涂法制備的樣品的吸收峰強(qiáng)度相近,都高于正常旋涂制備的薄膜吸收強(qiáng)度。相應(yīng)的薄膜晶體管器件遷移率采用溶劑輔助旋涂法制備的器件遷移率為0.041cm2/vs,而正常條件制備的器件遷移率為0.007cm2/vs。通過(guò)對(duì)結(jié)晶性和器件遷移率進(jìn)行的比較,這種新型的溶劑蒸汽輔助旋涂法相當(dāng)于正常旋涂和后續(xù)熏蒸處理兩個(gè)過(guò)程,這種方法可能會(huì)在實(shí)際生產(chǎn)過(guò)程中節(jié)省更多的時(shí)間,生產(chǎn)程序也更加簡(jiǎn)單,所以這種新型的溶劑蒸汽輔助旋涂法應(yīng)該值得廣泛的關(guān)注。
[Abstract]:Based on the study of polyhexylthiophene (P3HT) thin films, the microstructure and the properties of the thin film transistors are regulated by controlling the volatile rate of the solvent during the preparation of the films. In the first part, P3 HT films were prepared by spin coating with different concentrations of chloroform solution. The results of one-dimensional out-of-plane grazing incidence X-ray show that the intensity of the (100) diffraction peak in the out-of-plane direction increases with the decrease of the concentration of the solution used, but the change trend of the (010) diffraction peak is just the opposite. We then observed two-dimensional grazing incident X-ray diffraction. The results show that the molecular chain in the thin films prepared in low concentration solution changed from face-on orientation to edge-on orientation. By measuring the performance of thin film transistor devices, it is proved that the edge-on orientation corresponds to higher carrier mobility. The results are similar to those obtained from the samples prepared with high boiling point solvents. In the second part, we adopt a new solvent-assisted spin-coating method to prepare the samples. The essence of the method is to regulate the microstructure of the films by inhibiting solvent volatilization. Three groups of samples with different conditions were prepared by using chlorobenzene solvent. The samples were prepared by 120min fumigation and solvent vapor assisted spin-coating. It is found that the absorption peak intensity of the samples prepared by fumigation and solvent-assisted spin-coating is similar and higher than that of the films prepared by normal spin-coating. The mobility of the thin film transistor devices prepared by solvent-assisted spin-coating method is 0.041 cm ~ 2 / V _ s, while that of the devices prepared under normal conditions is 0.007 cm ~ 2 / vs. By comparing crystallization and device mobility, this new solvent-steam assisted spin-coating process is equivalent to two processes, normal spin-coating and subsequent fumigation, which may save more time in actual production. The production process is also simpler, so this new solvent vapor-assisted spin-coating method deserves extensive attention.
【學(xué)位授予單位】：長(zhǎng)春工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TQ317;TB383.2

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