本文選題：TbFeCo + Co_2FeAl_(0.5)Si_(0.5)　； 參考：《華僑大學》2016年碩士論文

【摘要】：本文采用磁控濺射法制備生長了具有良好垂直磁各向異性(PMA)的TbFeCo非晶薄膜和Si/Ta/Pd/CFAS/MgO/Pd結構的磁性多層膜,并研究了濺射工藝和膜層結構設計與所制備PMA的關系。首先,搭建了一套可同時測量垂直磁化薄膜的磁光、磁電功能特性的磁光電一體化測試系統(tǒng)。其次,利用磁控濺射技術,采用FeCo靶和Tb片組合的復合鑲嵌靶制備了具有PMA的TbFeCo薄膜。經(jīng)過實驗分析后發(fā)現(xiàn),低的工作氣壓能夠在更小的濺射功率下制備得到具有較高PMA的TbFeCo薄膜;當TbFeCo薄膜的膜厚在一定的范圍內逐漸增大時,TbFeCo薄膜的剩磁比不斷變大而其矯頑力不斷減小;在一定的復合靶的組合形式下只通過改變?yōu)R射功率制備出了富Tb和富FeCo兩種類型的TbFeCo薄膜,隨著濺射功率的增大薄膜由富FeCo狀態(tài)轉變成富Tb狀態(tài),由此可以看出采用復合靶形式,濺射功率對沉積薄膜的成分有較明顯的影響。最后,采用磁控濺射的技術制備了具有PMA的Si/Ta/Pd/CFAS/MgO/Pd多層膜,研究了Pd緩沖層厚度、CFAS磁性層的厚度以及退火溫度與薄膜PMA的關系。發(fā)現(xiàn)在Ta層和磁性層之間插入一定厚度Pd緩沖層是該結構的薄膜獲得PMA的必要條件;在其它各層厚度固定的情況下,制備了一系列不同磁性層厚度的薄膜樣品,經(jīng)300℃真空退火30min后,磁性層厚度在2.6nm-4.3nm范圍內的薄膜具有良好PMA;對磁性層厚度為3.8nm的樣品進行不同溫度的真空退火處理,發(fā)現(xiàn)薄膜先由面內磁各向異性轉變?yōu)镻MA,然后隨著溫度繼續(xù)升高薄膜的PMA慢慢變差到最后PMA完全被破壞;制備了磁性層厚度為20nm的薄膜,研究了不同退火溫度對其面內磁各向異性的影響,實驗結果表明,退火溫度的不斷增加,薄膜面內磁特性由單軸磁各向異性慢慢的轉變?yōu)榇鸥飨蛲?同時薄膜易磁化軸方向的矯頑力逐漸變大。
[Abstract]:In this paper, the magnetron sputtering method was used to prepare magnetic multilayer films with good vertical magnetic anisotropy (PMA) TbFeCo amorphous film and Si/Ta/Pd/CFAS/MgO/Pd structure. The relationship between the sputtering process and the structure design of the film and the preparation of the PMA was studied. Second, using the magnetron sputtering technique, the TbFeCo thin film with PMA is prepared by the composite mosaic target of FeCo target and Tb piece. After the experiment, it is found that the low working pressure can be prepared with a higher PMA TbFeCo film under the smaller sputtering power; when the film thickness of the TbFeCo film is in the thin film, the film thickness of the TbFeCo film is in the thin film. When a certain range increases, the remanence ratio of TbFeCo film increases and the coercivity decreases continuously. Under the combination of a certain composite target, only two types of TbFeCo rich Tb and rich FeCo films have been prepared by changing the sputtering power. With the increase of sputtering power, the thin film is transformed from FeCo rich to rich Tb state. It is found that the sputtering power has a significant influence on the composition of the deposited film. Finally, the Si/Ta/Pd/CFAS/MgO/Pd multilayer films with PMA are prepared by magnetron sputtering. The thickness of the Pd buffer layer, the thickness of the CFAS magnetic layer and the relationship between the annealing temperature and the thin film PMA are studied. It is found that the Ta layer and the magnetic layer are inserted between the magnetic layer and the magnetic layer. A certain thickness of Pd buffer layer is a necessary condition for the film of this structure to obtain PMA. Under the condition of fixed thickness of other layers, a series of thin film samples with different thickness of magnetic layer are prepared. After vacuum annealing at 300 C for 30min, the film with the thickness of the magnetic layer in the 2.6nm-4.3nm range has a good PMA; the sample with the thickness of the magnetic layer is 3.8nm. In the vacuum annealing treatment at different temperatures, it is found that the magnetic anisotropy in the film is changed to PMA in the first surface, and then the PMA of the film is gradually reduced to the final PMA as the temperature continues to rise. The film thickness of the magnetic layer is 20nm, and the effect of the different annealing temperature on the magnetic anisotropy in the surface is studied. The experimental results show that the film is retreated. The magnetic properties in the film surface gradually change from uniaxial anisotropy to magnetic isotropy, and the coercive force in the direction of the magnetization axis of the thin film gradually becomes larger.
【學位授予單位】：華僑大學
【學位級別】：碩士
【學位授予年份】：2016
【分類號】：O484.1
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本文編號：1930059