本文選題：脈沖激光沉積　切入點：Mica　出處：《深圳大學》2017年碩士論文　論文類型：學位論文

【摘要】：平面顯示、薄膜晶體管以及柔性可穿戴電子器件等新型光/電器件的飛速發(fā)展,對透明導電材料的光電性能以及疲勞穩(wěn)定性等提出了越來越高的技術要求。透明導電材料通常包含透明基底和透明導電薄膜兩個部分,目前應用最為廣泛的透明導電薄膜當屬氧化物Sn:In203(ITO)薄膜,但是它的缺點在于In屬于稀有金屬,價格昂貴,并且對人身安全以及自然環(huán)境有一定的負面影響。Al:ZnO(AZO)薄膜是近期研究較多的氧化物透明材料,它具有與ITO相媲美的電學與光學特性,其更突出的優(yōu)勢在于:無毒、成本低、制備方法多且工藝簡單。因此AZO薄膜被認為具有取代ITO薄膜的潛力。Oxide/Metal/Oxide(OMO)金屬夾層三明治結(jié)構(gòu)在純氧化物薄膜的基礎上,以較小的厚度可以實現(xiàn)更加優(yōu)越的光電性能。聚合物基底(如PET,PEN等)是目前使用最廣泛的柔性透明基底。然而由于不耐高溫及尺寸穩(wěn)定性差等缺點,很難在聚合物基底上沉積高質(zhì)量的透明氧化物薄膜。著眼于此,本文提出一種新型的柔性透明基底云母(Mica),它同時具有耐高溫、低熱膨脹系數(shù)、表面粗糙度小、透明度高等優(yōu)點,有希望替代聚合物柔性基底成為新一代柔性透明基底。本文采用脈沖激光沉積法制備出高性能ITO、AZO以及AZO/Au/AZO透明導電薄膜,研究和分析了薄膜厚度、沉積溫度、氧分壓以及退火溫度等工藝因素對薄膜結(jié)構(gòu)、表面形貌及光電性能的影響;比較了Mica和PET基底對透明導電薄膜的光電性能的影響。采用基于Mica的透明導電材料為電極制備和表征了柔性薄膜加熱器和柔性鈣鈦礦太陽能電池這兩種光/電器件的使用性能。具體的研究結(jié)果如下:(1)實驗表明,退火溫度對ITO薄膜的微觀結(jié)構(gòu)以及光電性能有著很大的影響。經(jīng)過高溫退火處理,薄膜的結(jié)晶性增強,表面粗糙度降低。當基底溫度為300?C時,可以獲得最佳的導電性能,100 nm ITO薄膜方阻低至68?/□;而當襯底溫度升至500?C時,可見光的平均透過率最高,可達88.5%。結(jié)果顯示,由于采用了高溫工藝,在Mica上沉積的ITO薄膜光電性能相比于PET基底獲得了極大的提高。(2)XRD和RHEED結(jié)果表明,AZO可以在Mica上島狀生長,形成外延單晶薄膜。在基底溫度為200?C,氧氣分壓為0.5 Pa的條件下沉積的AZO薄膜具有最低的方塊電阻的導電性能最好,100 nm AZO薄膜的方阻為21?/□;但氧氣分壓對薄膜的透光性影響較小,不同氧壓下薄膜在可見光區(qū)的平均透射率均大于90%。由于在Mica襯底上制備的是AZO單晶外延薄膜,其導電性以及透光性較之前在Si(001),玻璃以及聚合物襯底上制備的AZO薄膜有較高的提升。(3)Au層厚度對于AZO/Au/AZO多層膜的光電性能具有決定性的影響,Au層最佳厚度為12 nm;頂層AZO膜薄對薄膜整體的表面粗糙度及透過率影響也十分明顯;當其厚度分別為50 nm/12 nm/50 nm時,樣品的方塊電阻可低至1.4?/□,可見光平均透過率達到74.1%,品質(zhì)因數(shù)為3.565×10-2?-1。(4)以Mica基透明導電材料制備的薄膜加熱器具有升降溫速率快,溫度保持較穩(wěn)定,循環(huán)穩(wěn)定性好等優(yōu)勢,在高溫柔性透明加熱器領域具有良好的應用前景。初步以ITO/Mica為電極制備的鈣鈦礦太陽能電池效率可達9.87%,展示了一定的應用潛力。
[Abstract]:Flat display, thin film transistor and the rapid development of flexible wearable electronic devices such as optical / electrical parts, requires more and more high technology of transparent conductive material and optical properties and fatigue stability. Transparent conductive material usually contains two parts of a transparent substrate and a transparent conductive film, the most transparent conductive film is Sn:In203 oxide (ITO) thin film is widely, but its drawback is that the In belongs to the rare metal, expensive, and has a negative impact on the safety of.Al:ZnO and natural environment (AZO) thin film is oxide transparent material has been found, it has electrical and optical properties comparable to the ITO, is the more prominent advantages: low cost, non-toxic, preparation method and simple process. The AZO film is considered to have the potential to replace the ITO film.Oxide/Metal/ Oxide (OMO) metal clip Sandwich structure based on pure oxide films, with smaller thickness can achieve better performance. The photoelectric polymer substrate (e.g. PET, PEN) is currently the most widely used flexible transparent substrate. However, due to the drawbacks of high temperature and poor dimensional stability, hard transparent oxide thin film deposition in high quality polymer on the basement. Based on this, this paper presents a new type of flexible transparent substrate (Mica), mica which has high temperature resistance, low thermal expansion coefficient, low surface roughness, high transparency, to replace the polymer on a flexible substrate as a new generation of flexible transparent substrate. By using pulsed laser deposition a high performance ITO, AZO and AZO/Au/AZO transparent conductive film, research and analysis of film thickness, deposition temperature, oxygen partial pressure and process factors such as annealing temperature on film structure, surface morphology and optical Effect of electrical properties; optical and electrical properties of transparent conductive films Mica and PET substrate were compared. Using transparent conductive materials based on Mica as the electrode preparation and characterization of flexible thin film heater and flexible perovskite type solar cell for the two kinds of optical / electrical parts performance. The results are as follows: (1) experiment that has a great impact on Microstructure of annealing temperature on ITO thin film and photoelectric properties. After annealing treatment, the crystallinity of the films increased, the surface roughness decreases. When the substrate temperature is 300? C, can obtain the optimum conductivity properties of ITO thin films, 100 nm low resistance to 68? / /; when the substrate temperature to 500? C, the average visible light transmittance can reach the highest, 88.5%. results showed that due to the high temperature process, the photoelectric properties of ITO films deposited on Mica substrate compared to PET was greatly improved. (2) XRD And RHEED results showed that AZO can grow on Mica Island, the formation of epitaxial single crystal films. The substrate temperature is 200? C, oxygen partial pressure of the electrical conductivity of AZO thin film deposition conditions of 0.5 Pa has the lowest square resistance of the best resistance 100 nm AZO film is 21? / - but the oxygen; the partial pressure of light affects the film under different oxygen pressure is small, thin film in the visible light transmittance is greater than 90%. because the preparation on the Mica substrate is AZO epitaxial film, the conductivity and light transmittance than before in Si (001), glass and polymer substrates prepared AZO films are higher ascension. (3) has a decisive influence on the thickness of Au layer for AZO/Au/AZO multilayer optical properties, Au layer thickness is 12 nm; the top AZO thin film on the film surface roughness and transmittance of the overall effect is also very obvious; when the thickness is 50 nm/12 nm/50 NM When the sheet resistance of samples can be as low as 1.4? / /, the average visible transmittance reaches 74.1%, the quality factor is 3.565 x 10-2? -1. (4) to Mica based transparent conductive material prepared with thin film heater temperature rate, the temperature is stable, good cycle stability and other advantages, has the application good prospects in high temperature flexible transparent heater field. Preliminary ITO/Mica perovskite solar cell electrode preparation efficiency up to 9.87%, showing potential applications.

【學位授予單位】：深圳大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TB383.2;TM914.4

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本文編號：1582087